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 TSM2N7002
60V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5 RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5
Features
Advanced trench process technology High density cell design for low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No. TSM2N7002CX Packing Tape & Reel Package SOT-23
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta > 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG
o o
Symbol
VDS VGS ID IDM PD
Limit
60 20 115 800 225 1.8 +150 - 55 to +150
Unit
V V mA mA mW MW/ C
o o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL Rja
Limit
5 417
Unit
S
o
C/W
TSM2N7002
1-3
2003/12 rev. B
Electrical Characteristics
Tj = 25 C unless otherwise noted
o
Parameter Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current
Conditions
VGS = 0V, ID = 10uA VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA VDS = VGS, ID = 250uA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS 2V, VGS = 10V
Symbol
Min
60 --1.0 --500
Typ
--------
Max
-7.5 13.5 2.5 1.0 100 --
Unit
V
BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON)
V uA nA mA
Dynamic
Turn-On Rise Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDD = 25V, RL = 50, ID = 500mA, VGEN = 10V, RG = 25 VDS = 25V, VGS = 0V, f = 1.0MHz tr tf Ciss Coss Crss -------50 25 5 20 40 ---pF nS
Source-Drain Diode
Max. Diode Forward Current Diode Forward Voltage IS = 115mA, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% IS VSD ---1.3 115 1.5 mA V
TSM2N7002
2-3
2003/12 rev. B
SOT-23 Mechanical Drawing
A B
F
SOT-23 DIMENSION DIM A MILLIMETERS MIN MAX 2.88 0.39 1.78 0.51 1.50 1.04 0.07 2.91 0.42 2.03 0.61 1.70 1.08 0.09 INCHES MIN MAX 0.113 0.015 0.070 0.020 0.061 0.041 0.003 0.115 0.017 0.080 0.024 0.069 0.043 0.004
E
B C D E F G
G
D
C
TSM2N7002
3-3
2003/12 rev. B


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